Перегляд за автором "Kostylyov, V.P."

Сортувати за: Порядок: Результатів:

  • Korkishko, R.M.; Kostylyov, V.P.; Prima, N.A.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of ...
  • Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
  • Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...
  • Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Romanets, P.N.; Sokolovskyi, I.O.; Shkrebti, A.I.; Terukov, E.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the ...
  • Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Sachenko, A.V.; Gorban, A.P.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation ...
  • Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • Kostylyov, V.P.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Vlasyuk, V.M.; Tytarenko, P.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of ...
  • Sachenko, A.V.; Kulish, M.R.; Sokolovskyi, I.O.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic ...
  • Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Sachenko, A.V.; Kostylyov, V.P.; Kulish, M.R.; Sokolovsky, L.O.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient ...
  • Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • Sachenko, A.V.; Kostylyov, V.P.; Korkishko, R.M.; Kulish, M.R.; Sokolovskyi, I.O.; Vlasiuk, V.M.; Khomenko, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant ...
  • Sachenko, A.V.; Kostylyov, V.P.; Vlasiuk, V.M.; Sokolovskyi, I.O.; Evstigneev, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when ...
  • Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...